vs-mbr10...pbf series, vs-mbr10...-n3 series www.vishay.com vishay semiconductors revision: 29-aug-11 1 document number: 94284 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 10 a features ? 150 c t j operation ? high frequency operation ? low forward voltage drop ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and mois ture resistance ? guard ring for enhanced ruggedness and long term reliability ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) description this schottky rectifier has be en optimized for low reverse leakage at high temperatu re. the proprietary barrier technology allows for reliable operation up to 150 c junction temperature. typical applications are in switching power supplies, converters , freewheeling diodes, and reverse battery protection. product summary package to-220ac i f(av) 10 a v r 35 v, 45 v v f at i f 0.57 v i rm max. 15 ma at 125 c t j max. 150 c diode variation single die e as 8 mj anode 1 3 cathode base cathode 2 to-220ac major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 10 a i frm t c = 135 c 20 v rrm 35/45 v i fsm t p = 5 s sine 1060 a v f 10 a pk , t j = 125 c 0.57 v t j range - 65 to 150 c voltage ratings parameter symbol vs-mbr1035pbf vs-mbr 1035-n3 vs-mbr1045pbf vs-mbr1045-n3 units maximum dc reverse voltage v r 35 35 45 45 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 135 c, rated v r 10 a peak repetitive forward current i frm rated v r , square wave, 20 khz, t c = 135 c 20 non-repetitive peak surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 1060 a surge applied at rated load conditions halfwave, single phase, 60 hz 150 non-repetitive avalanche energy e as t j = 25 c, i as = 2 a, l = 4 mh 8mj repetitive avalanche current i ar current decaying linearly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 2a
vs-mbr10...pbf series, vs-mbr10...-n3 series www.vishay.com vishay semiconductors revision: 29-aug-11 2 document number: 94284 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm (1) 20 a t j = 25 c 0.84 v 10 a t j = 125 c 0.57 20 a 0.72 maximum instantaneous reverse current i rm (1) t j = 25 c rated dc voltage 0.1 ma t j = 125 c 15 threshold voltage v f(to) t j = t j maximum 0.354 v forward slope resistance r t 17.6 m ? maximum junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c 600 pf typical series inductance l s measured from top of terminal to mounting plane 8.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction temperature range t j - 65 to 150 c maximum storage temperature range t stg - 65 to 175 maximum thermal resistance, junction to case r thjc dc operation 2.0 c/w typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased (only for to-220) 0.50 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ac mbr1035 mbr1045
vs-mbr10...pbf series, vs-mbr10...-n3 series www.vishay.com vishay semiconductors revision: 29-aug-11 3 document number: 94284 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristic s fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics v fm - forward voltage drop (v) i f - instantaneous forward current (a) 1.4 0.2 0.4 0.6 0. 8 1.0 1.2 1.6 1 10 100 1. 8 t j = 150 c t j = 125 c t j = 25 c v r - reverse voltage (v) i r - reverse current (ma) 0.0001 0.001 0.01 0.1 1 0 20253545 10 100 t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 51015 30 40 1000 v r - reverse voltage (v) c t - junction capacitance (pf) 0 100 10 30 40 20 50 t j = 25 c t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 0.1 1 10 0.00001 0.0001 0.001 0.01 100 . p dm t 1 t 2 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c single p u lse (thermal resistance) d = 0.75 d = 0.33 d = 0.25 d = 0.20 d = 0.50 0.01 0.1 1.0 10
vs-mbr10...pbf series, vs-mbr10...-n3 series www.vishay.com vishay semiconductors revision: 29-aug-11 4 document number: 94284 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non-repetitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r i f(av) - average forward current (a) allowable case temperature (c) 120 125 130 135 140 145 150 015 36912 dc see note (1) s qu are w a v e (d = 0.50) rated v r applied i f(av) - average forward current (a) average power loss (w) 024 16 0 2 4 10 6 8 6 8 10 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 12 14 t p - square wave pulse duration (s) i fsm - non-repetitive surge current (a) 10 100 1000 10 000 100 1000 at any rated load condition and w ith rated v rrm applied follo w ing s u rge
vs-mbr10...pbf series, vs-mbr10...-n3 series www.vishay.com vishay semiconductors revision: 29-aug-11 5 document number: 94284 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-mbr1035pbf 50 1000 antistatic plastic tube vs-mbr1035-n3 50 1000 antistatic plastic tube vs-mbr1045pbf 50 1000 antistatic plastic tube vs-mbr1045-n3 50 1000 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95221 part marking information to-220ac pbf www.vishay.com/doc?95224 to-220ac -n3 www.vishay.com/doc?95068 spice model www.vishay.com/doc?95293 - schottky mbr series - currrent rating (10 = 10 a) - voltage ratings 35 = 35 v 45 = 45 v device code 2 4 3 5 mbr 10 45 pbf vs- 1 - vishay semiconductors product 2 3 4 5 1 - pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant, and totally lead (pb)-free environmental digit
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
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